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Product Appearance
Front Side
Rear Side
Physical Characteristics
| Substrate material | N type, Phosphorus doped,monocrystalline silicon wafer |
| Thickness | 130±10%um |
| Dimension | 210mm*210mm±0.25mm, Φ295mm±0.25mm |
| Front Side | 18 Bus Bars,188±10%fingers,blue antireflection layer(SiNx) |
| Rear Side | 18 Bus Bars,192±10%fingers,blue antireflection layer(SiNx) |
IV Curve
Temperature Coefficients
| Power Temperature Coefficient |
-(0.30±0.02) %/K |
|
Voltage Temperature Coefficient |
-(0.26±0.03) %/K |
|
Current Temperature Coefficientt |
+(0.046±0.015) %/K |
Electrical data
| Eff. Grade（%） | Isc(A) | Voc(V) | Impp(A) | Vmpp(V) | Pmpp(W) | FF（%） |
| 25.5 | 18.024 | 0.730 | 17.353 | 0.648 | 11.24 | 85.46 |
| 25.4 | 18.005 | 0.728 | 17.338 | 0.646 | 11.20 | 85.45 |
| 25.3 | 17.980 | 0.727 | 17.297 | 0.645 | 11.16 | 85.35 |
| 25.2 | 17.952 | 0.726 | 17.255 | 0.644 | 11.11 | 85.26 |
| 25.1 | 17.908 | 0.725 | 17.213 | 0.643 | 11.07 | 83.25 |
| 25.0 | 17.632 | 0.724 | 17.171 | 0.642 | 11.02 | 85.18 |
| 24.9 | 17.586 | 0.723 | 17.129 | 0.641 | 10.98 | 85.18 |
| 24.8 | 17.527 | 0.722 | 17.087 | 0.640 | 10.94 | 85.24 |
| 24.7 | 17.498 | 0.721 | 17.045 | 0.639 | 10.89 | 85.15 |
| 24.6 | 17.431 | 0.720 | 17.003 | 0.638 | 10.85 | 85.25 |
|
24.5 |
17.390 | 0.719 | 16.960 | 0.637 | 10.80 | 85.22 |
| 24.4 | 17.361 | 0.718 | 16.917 | 0.636 | 10.76 | 85.13 |
| 24.3 | 17.334 | 0.717 | 16.875 | 0.635 | 10.72 | 85.03 |
| 24.2 | 17.291 | 0.716 | 16.832 | 0.634 | 10.67 | 85.01 |
| 24.1 | 17.255 | 0.715 | 16.789 | 0.633 | 10.63 | 84.95 |
All electrical data measured under standard test conditions: 1000W/m2, AM 1.5, 25°C.
Sichuan Sunsync Photovoltaic Technology Co., Ltd. of final interpretation about the above technology parameter.
Web Address：http://sunsyncgroup.com
Email：info@sunsyncgroup.com
Address: Building 72, Jinrun Industrial Park, Gaochang Town, Xuzhou District, Yibin City, Sichuan Province, China.
Address: Building 72, Jinrun Industrial Park, Gaochang Town, Xuzhou District, Yibin City, Sichuan Province, China.
