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Product Appearance
Front Side
Rear Side
Physical Characteristics
| Substrate material | N type, Phosphorus doped,monocrystalline silicon wafer |
| Thickness | 130±10%um |
| Dimension | 182.2mm*210mm±0.25mm, Φ272mm±0.25mm |
| Front Side | 16 Bus Bars,210±10%fingers,blue antireflection layer(SiNx) |
| Rear Side | 16 Bus Bars,228±10%fingers,blue antireflection layer(SiNx) |
IV Curve
Temperature Coefficients
| Power Temperature Coefficient |
-(0.30±0.02) %/K |
|
Voltage Temperature Coefficient |
-(0.26±0.03) %/K |
|
Current Temperature Coefficientt |
+(0.046±0.015) %/K |
Electrical data
| Eff. Grade（%） | Isc(A) | Voc(V) | Impp(A) | Vmpp(V) | Pmpp(W) | FF（%） |
| 25.7 | 15.750 | 0.732 | 15.286 | 0.642 | 9.81 | 85.12 |
| 25.6 | 15.731 | 0.731 | 15.250 | 0.641 | 9.78 | 85.01 |
| 25.5 | 15.709 | 0.730 | 15.238 | 0.639 | 9.74 | 84.91 |
| 25.4 | 15.698 | 0.728 | 15.226 | 0.637 | 9.70 | 84.87 |
| 25.3 | 15.671 | 0.727 | 15.190 | 0.636 | 9.66 | 84.80 |
| 25.2 | 15.637 | 0.726 | 15.154 | 0.635 | 9.62 | 84.76 |
| 25.1 | 15.612 | 0.725 | 15.141 | 0.633 | 9.58 | 84.68 |
| 25.0 | 15.589 | 0.724 | 15.105 | 0.632 | 9.55 | 84.58 |
| 24.9 | 15.548 | 0.723 | 15.068 | 0.631 | 9.51 | 84.58 |
| 24.8 | 15.496 | 0.722 | 15.032 | 0.630 | 9.47 | 84.64 |
| 24.7 | 15.472 | 0.721 | 14.995 | 0.629 | 9.43 | 84.55 |
| 24.6 | 15.412 | 0.720 | 14.958 | 0.628 | 9.39 | 84.65 |
|
24.5 |
15.376 | 0.719 | 14.921 | 0.627 | 9.36 | 84.62 |
| 24.4 | 15.351 | 0.718 | 14.884 | 0.626 | 9.32 | 84.53 |
| 24.3 | 15.328 | 0.717 | 14.846 | 0.625 | 9.28 | 84.43 |
All electrical data measured under standard test conditions: 1000W/m2, AM 1.5, 25°C.
Sichuan Sunsync Photovoltaic Technology Co., Ltd. of final interpretation about the above technology parameter.
Web Address：http://sunsyncgroup.com
Email：info@sunsyncgroup.com
Address: Building 72, Jinrun Industrial Park, Gaochang Town, Xuzhou District, Yibin City, Sichuan Province, China.
Address: Building 72, Jinrun Industrial Park, Gaochang Town, Xuzhou District, Yibin City, Sichuan Province, China.
